Datasheet

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.5.0 2
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP Zero-Cross Triac Drivers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. Isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1, 2 and 3 are common,
and Pins 4, 5 and 6 are common. 5,000 VRMS for 1 minute duration is equivalent to 6,000 VRMS for 1 second
duration.
Symbol Parameters Device Value Units
TOTAL DEVICE
T
STG
Storage Temperature All -55 to +150 °C
T
OPR
Operating Temperature All -55 to +100 °C
T
SOL
Lead Solder Temperature (Wave) All 260 for 10 sec °C
T
J
Junction Temperature Range All 125 °C
V
ISO
Isolation Test Voltage
(1)
(rms AC voltage, 60Hz, 1 min. duration)
All 5000 Vac(rms)
P
DTOTAL
Total Device Power Dissipation @ 25°C
Derate above 25°C
All 500 mW
6.6 mW/°C
EMITTER
I
F
Continuous Forward Current All 30 mA
V
R
Reverse Voltage All 6 V
P
DE
Total Power Dissipation 25°C Ambient
Derate above 25°C
All 50 mW
0.71 mW/°C
DETECTOR
V
DRM
Off-State Output Terminal Voltage FOD410, FOD4116 600 V
FOD4108, FOD4118 800
I
TSM
Peak Non-Repetitive Surge Current
(single cycle 60Hz sine wave)
All 3 A
I
TM
Peak On-State Current All 300 mA
P
DDET
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
All 450 mW
5.9 mW/°C