Datasheet

©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.5.0 3
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP Zero-Cross Triac Drivers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
*Typical values at T
A
= 25°C
Symbol Parameters Test Conditions Device Min. Typ.* Max Units
EMITTER
V
F
Input Forward Voltage I
F
= 20mA All 1.25 1.5 V
I
R
Reverse Leakage
Current
V
R
= 6V All 0.0001 10 µA
DETECTOR
I
D(RMS)
Peak Blocking Current,
Either Direction
I
F
= 0,
T
A
= 100°C
(2)
V
D
= 800V FOD4108,
FOD4118
3 100 µA
V
D
= 600V FOD410,
FOD4116
I
R(RMS)
Reverse Current T
A
= 100°C V
D
= 800V FOD4108,
FOD4118
3 100 µA
V
D
= 600V FOD410,
FOD4116
dv/dt Critical Rate of Rise of
Off-State Voltage
I
F
= 0
(4)
(Fig. 11) 10,000 V/µs
Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units
I
FT
LED Trigger Current Main Terminal Voltage = 5V
(3)
FOD410,
FOD4108
0.65 2.0 mA
FOD4116,
FOD4118
0.65 1.3
V
TM
Peak On-State Voltage,
Either Direction
I
TM
= 300 mA peak, I
F
= rated I
FT
All 2.2 3 V
I
H
Holding Current,
Either Direction
V
T
= 3V All 200 500 µA
I
L
Latching Current V
T
= 2.2V All 5 mA
t
ON
Tur n-On Time PF = 1.0,
I
T
= 300mA
V
RM
= V
DM
= 565 VAC FOD4108 60 µs
V
RM
= V
DM
= 424 VAC FOD410,
FOD4116,
FOD4118
t
OFF
Tur n-Off Time V
RM
= V
DM
= 565 VAC FOD4108 52 µs
V
RM
= V
DM
= 424 VAC FOD410,
FOD4116,
FOD4118
dv/dt
crq
Critical Rate of Rise of
Voltage at Current
Commutation
V
D
= 0.67 V
DRM
,
di/dt
crq
≤ 15 A/ms
T
j
= 25°C All 10,000 V/µs
T
j
= 80°C 5,000
di/dt
cr
Critical Rate of Rise of
On-State Current
All 8 A/µs
dV(IO)/dt Critical Rate of Rise of
Coupled Input/Output
Voltage
I
T
= 0A,
V
RM
= V
DM
= 424VAC
All
10,000 V/µs