Datasheet

©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8001 Rev. 1.0.3 4
FOD8001 — High Noise Immunity, 3.3V/5V Logic Gate Optocoupler
Switching Characteristics (Apply over all recommended conditions, typical value is measured at
V
DD1
= V
DD2
= +3.3V, V
DD1
= +3.3V and V
DD2
= +5.0V, V
DD1
= +5.0V and V
DD2
= +3.3V, V
DD1
= V
DD2
= +5.0V, T
A
= 25°C)
Notes:
7. t
PSK
is equal to the magnitude of the worst case difference in t
PHL
and/or t
PLH
that will be seen between units at any
given temperature within the recommended operating conditions.
8. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of
the common mode impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity
at output low is the maximum tolerable negative dVcm/dt on the trailing edge of the common pulse signal, Vcm, to
assure that the output will remain low.
9. Unloaded dynamic power dissipation is calculated as follows:
C
PD
x V
DD
x f + I
DD
+ V
PD
where f is switched time in MHz.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
PHL
Propagation Delay Time to
Logic Low Output
C
L
= 15pF 25 40 ns
t
PLH
Propagation Delay Time to
Logic High Output
C
L
= 15pF 25 40 ns
PWD Pulse Width Distortion,
| t
PHL
– t
PLH
|
PWD = 40ns, C
L
= 15pF 2 6 ns
Data Rate 25 Mb/s
t
PSK
Propagation Delay Skew C
L
= 15pF
(7)
20 ns
t
R
Output Rise Time (10%–90%) 6.5 ns
t
F
Output Fall Time (90%–10%) 6.5 ns
|CM
H
| Common Mode Transient
Immunity at Output High
V
I
= V
DD1
, V
O
> 0.8 V
DD1
,
V
CM
= 1000V
(8)
20 40 kV/µs
|CM
L
| Common Mode Transient
Immunity at Output Low
V
I
= 0V, V
O
< 0.8V,
V
CM
= 1000V
(8)
20 40 kV/µs
C
PDI
Input Dynamic Power
Dissipation Capacitance
(9)
30 pF
C
PDO
Output Dynamic Power
Dissipation Capacitance
(9)
3pF