Datasheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 3
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage FOD814 I
F
= ±20mA 1.2 1.4 V
FOD817 I
F
= 20mA 1.2 1.4
I
R
Reverse Leakage Current FOD817 V
R
= 4.0V 10 µA
C
t
Te r minal Capacitance FOD814 V = 0, f = 1kHz 50 250 pF
FOD817 V = 0, f = 1kHz 30 250
DETECTOR
I
CEO
Collector Dark Current FOD814 V
CE
= 20V, I
F
= 0 100 nA
FOD817 V
CE
= 20V, I
F
= 0 100
BV
CEO
Collector-Emitter Breakdown
Voltage
FOD814 I
C
= 0.1mA, I
F
= 0 70 V
FOD817 I
C
= 0.1mA, I
F
= 0 70
BV
ECO
Emitter-Collector Breakdown
Voltage
FOD814 I
E
= 10µA, I
F
= 0 6 V
FOD817 I
E
= 10µA, I
F
= 0 6
Symbol
DC
Characteristic Device Test Conditions Min. Typ.* Max. Unit
CTR Current Transfer
Ratio
FOD814 I
F
= ±1mA, V
CE
= 5V
(1)
20 300 %
FOD814A 50 150
FOD817 I
F
= 5mA, V
CE
= 5V
(1)
50 600
FOD817A 80 160
FOD817B 130 260
FOD817C 200 400
FOD817D 300 600
V
CE (sat)
Collector-Emitter
Saturation Voltage
FOD814 I
F
= ±20mA, I
C
= 1mA 0.1 0.2 V
FOD817 I
F
= 20mA, I
C
= 1mA 0.1 0.2
Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit
f
C
Cut-Off Frequency FOD814 V
CE
= 5V, I
C
= 2mA, R
L
= 100 Ω ,
-3dB
15 80 kHz
t
r
Response Time (Rise) FOD814,
FOD817
V
CE
= 2 V, I
C
= 2mA, R
L
= 100 Ω
(2)
418µs
t
f
Response Time (Fall) FOD814,
FOD817
318µs