Datasheet
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 2
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics
(T
A
= 25°C)
Individual Component Characteristics
Symbol Parameter Value Units
TOTAL PACKAGE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +110 °C
EMITTER
I
F (avg)
Continuous Forward Current 50 mA
I
F (pk)
Peak Forward Current (1µs pulse, 300 pps.) 1 A
V
R
Reverse Input Voltage 6 V
P
D
Power Dissipation 70 mW
Derate linearly (above 25°C) 0.65 mW/°C
DETECTOR
Continuous Collector Current 80 mA
P
D
Power Dissipation 150 mW
Derate linearly (above 25°C) 2.0 mW/°C
V
CEO
Collector-Emitter Voltage FODM2701, FODM2705 40 V
FODM121 Series, FODM124 80
V
ECO
Emitter-Collector Voltage 7 V
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage I
F
= 10mA FODM121 Series,
FODM124
1.0 1.3 V
I
F
= 5mA FODM2701 1.4
I
F
= ±5mA FODM2705
I
R
Reverse Current V
R
= 5V FODM2701 5 µA
FODM121 Series
FODM124
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1mA, I
F
= 0 FODM121 Series,
FODM124
80 V
FODM2701,
FODM2705
40
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 V
I
CEO
Collector Dark
Current
V
CE
= 40V, I
F
= 0 All 100 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz All 10 pF