Datasheet
©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM452, FODM453 Rev. 1.0.5 4
FODM452, FODM453 — 5-Pin Mini Flat Package High Speed Transistor Optocoupler
Electrical Characteristics
(T
A
= 0 to 70°C unless otherwise specified)
Individual Component Characteristics
Transfer Characteristics
Switching Characteristics
(V
CC
= 5V)
Isolation Characteristics
*All Typicals at T
A
= 25°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 16mA, T
A
= 25°C 1.60 1.7 V
I
F
= 16mA 1.8
B
VR
Input Reverse Breakdown Voltage I
R
= 10µA 5.0 V
∆
V
F
/
∆
T
A
Temperature Coefficient of
Forward Voltage
I
F
= 16mA -1.8 mV/°C
DETECTOR
I
OH
Logic High Output Current I
F
= 0mA, V
O
= V
CC
= 5.5V, T
A
=25°C .001 0.5 µA
I
F
= 0 mA, V
O
= V
CC
= 15V, T
A
=25°C .001 1
I
F
= 0mA, V
O
= V
CC
= 15V 50
I
CCL
Logic Low Supply Current I
F
= 16mA, V
O
= Open, V
CC
= 15V 100 200 µA
I
CCH
Logic high supply current I
F
= 0 mA, V
O
= Open, V
CC
= 15V,
T
A
= 25°C
0.05 1 µA
I
F
= 0mA, V
O
= Open, V
CC
= 15V 2
Symbol Parameter Test Conditions Min. Typ.* Max Unit
COUPLED
CTR Current Transfer Ratio
(1)
I
F
= 16mA, V
CC
= 4.5V T
A
= 25°C V
OL
=0.4V 20 50 %
V
OL
=0.5V 15
V
OL
Logic LOW Output
Voltage
I
F
= 16mA, I
O
= 3mA, V
CC
= 4.5V, T
A
=2 5°C 0.4 V
I
F
= 16mA, I
O
= 2.4mA, V
CC
= 4.5 V 0.5
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
T
PHL
Propagation Delay
Time to Logic LOW
R
L
= 1.9k
Ω
, I
F
= 16mA, T
A
= 25°C
(2)
(Fig. 9) 0.40 0.8 µs
R
L
= 1.9k
Ω
, I
F
= 16mA
(2)
(Fig. 9) 1.0 µs
T
PLH
Propagation Delay
Time to Logic HIGH
R
L
= 1.9kΩ, I
F
= 16mA, T
A
= 25°C
(2)
(Fig. 9) 0.35 0.8 µs
R
L
= 1.9kΩ, I
F
= 16mA
(2)
(Fig. 9) 1.0 µs
|CM
H
| Common Mode
Transient Immunity
at Logic HIGH
I
F
= 0mA, V
CM
= 10V
P-P
, R
L
= 1.9kΩ,
T
A
= 25°C
(3)
(Fig. 10)
FODM452 5 15 KV/µs
I
F
= 0mA, V
CM
= 1500V
P-P
, R
L
= 1.9kΩ
T
A
= 25°C
(3)
(Fig. 10)
FODM453 15 40 KV/µs
|CM
L
| Common Mode
Transient Immunity
at Logic LOW
I
F
= 16mA, V
CM
= 10V
P-P
, R
L
= 1.9kΩ,
T
A
= 25°C
(3)
(Fig. 10)
FODM452 5 15 KV/µs
I
F
= 16mA, V
CM
= 1500V
P-P
, R
L
= 1.9kΩ,
T
A
= 25°C
(3)
(Fig. 10)
FODM453 15 40 KV/µs
BW Bandwidth R
L
= 100Ω 3 MHz
Symbol Characteristics Test Conditions Min. Typ.* Max. Unit
V
ISO
Withstand Insulation Test Voltage RH ≤ 50%, T
A
= 25°C, t = 1 min.
(4)
3750 V
RMS
C
I-O
Capacitance (Input to Output) f = 1MHz
(4)
0.2 pF