Datasheet

©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM8071 Rev. 1.0.7 5
FODM8071 — 3.3V/5V Logic Gate Output Optocoupler with High Noise Immunity
Switching Characteristics (Apply over all recommended conditions)
(T
A
= -40ºC to +110ºC, 3.0V V
DD
5.5V, I
F
= 5mA), unless otherwise specified.
Typical value is measured at T
A
= 25ºC and V
DD
= 3.3V
Notes:
7. Data rate is based on 10MHz, 50% NRZ pattern with a 50nsec minimum bit time.
8. t
PSK
is equal to the magnitude of the worst case difference in t
PHL
and/or t
PLH
that will be seen between any two units
from the same manufacturing date code that are operated at same case temperature (±5°C), at same operating
conditions, with equal loads (R
L
= 350 and C
L
= 15pF), and with an input rise time less than 5ns.
9. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of
the common mode impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity
at output low is the maximum tolerable negative dVcm/dt on the trailing edge of the common pulse signal, Vcm,
to assure that the output will remain low.
10.Unloaded dynamic power dissipation is calculated as follows: C
PD
x V
DD
x f + I
DD
+ V
PD
where f is switched
time in MHz.
Symbol Parameter Test Conditions Min. Typ. Max. Units
Date Rate
(7)
20 Mbps
t
PW
Pulse Width 50 ns
t
PHL
Propagation Delay Time
to Logic Low Output
C
L
= 15pF, Fig. 7, 8, 12 31 55 ns
t
PLH
Propagation Delay Time
to Logic High Output
C
L
= 15pF, Fig. 7, 8, 12 25 55 ns
PWD Pulse Width Distortion,
| t
PHL
- t
PLH
|
C
L
= 15pF, Fig. 9, 10 5.5 20 ns
t
PSK
Propagation Delay Skew C
L
= 15pF
(8)
30 ns
t
R
Output Rise Time
(10% to 90%)
Fig. 11, 12 5.8 ns
t
F
Output Fall Time
(90% to 10%)
Fig. 11, 12 5.3 ns
|
CM
H
| Common Mode Transient
Immunity at Output High
I
F
= 0mA, V
O
> 0.8V
DD
,
V
CM
= 1000V, T
A
= 25ºC,
Fig. 13
(9)
20 40 kV/µs
|
CM
L
| Common Mode Transient
Immunity at Output Low
I
F
= 5mA, V
O
< 0.8V,
V
CM
= 1000V, T
A
= 25ºC,
Fig. 13
(9)
20 40 kV/µs
C
PDO
Output Dynamic Power
Dissipation
Capacitance
(10)
4pF