Datasheet

March 2014
FQA10N80C_F109 — N-Channel QFET
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
www.fairchildsemi.com
1
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQA10N80C_F109 Unit
V
DSS
Drain to Source Voltage 800 V
I
D
Drain Current
-Continuous (T
C
= 25
o
C) 10 A
-Continuous (T
C
= 100
o
C) 6.32 A
I
DM
Drain Current - Pulsed (Note 1) 40 A
V
GSS
Gate to Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy (Note 2) 920 mJ
I
AR
Avalanche Current (Note 1) 10 A
E
AR
Repetitive Avalanche Energy (Note 1) 24 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.0 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 240 W
- Derate above 25
o
C 1.92 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter
FQA10N80C_F109
Unit
R
θJC
Thermal Resistance, Junction to Case, Max 0.52
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max 40
o
C/W
FQA10N80C_F109
N-Channel QFET
®
MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, R
DS(on)
= 1.1 Ω (Max.) @ V
GS
= 10 V, I
D
= 5 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
TO-3PN
G
D
S
G
S
D