Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQA11N90C_F109, MOSFET

April 2014

FQA11N90C_F109 — N-Channel QFET

MOSFET

FQA11N90C_F109 Rev. C2

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQA11N90C_F109 Unit

DSS

Drain to Source Voltage 900 V

Drain Current

- Continuous (T

= 25

C) 11.0 A

- Continuous (T

= 100

C) 6.9 A

Drain Current - Pulsed (Note 1) 44.0 A

GSS

Gate to Source Voltage ± 30 V

Single Pulsed Avalanche Energy (Note 2) 960 mJ

Avalanche Current (Note 1) 11.0 A

Repetitive Avalanche Energy (Note 1) 30 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.0 V/ns

Power Dissipation

= 25

C) 300 W

- Derate Above 25

C 2.38 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter

FQA11N90C_F109

Unit

θJC

Thermal Resistance, Junction to Case, Max 0.42

C/W

θJA

Thermal Resistance, Junction to Ambient, Max 40

C/W

FQA11N90C_F109

N-Channel QFET

MOSFET

900 V, 11.0 A, 1.1 Ω

Features

• 11 A, 900 V, R

DS(on)

= 1.1 Ω (Max.) @ V

= 10 V, I

= 5.5 A

• Low Gate Charge (Typ. 60 nC)

• Low Crss (Typ. 23 pF)

• 100% Avalanche Tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is pro-

duced using Fairchild Semiconductor’s proprietary planar stripe

and DMOS technology. This advanced MOSFET technology

has been especially tailored to reduce on-state resistance, and

to provide superior switching performance and high avalanche

energy strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and elec-

tronic lamp ballasts.

TO-3PN

Summary of content (8 pages)

PAGE 1
FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number Top Mark FQA11N90C FQA11N90C_F109 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 900 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 1.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 10 o -55 C o 25 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.
PAGE 4
(Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation Figure 7.
PAGE 5
FQA11N90C_F109 — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 6
FQA11N90C_F109 — N-Channel QFET® MOSFET Figure 15.
PAGE 7
FQA11N90C_F109 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.