Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQA13N50CF, MOSFET

December 2013

FQA13N50CF — N-Channel QFET

FRFET

MOSFET

FQA13N50CF Rev C1

www.fairchildsemi.com

FQA13N50CF

N-Channel QFET

FRFET

MOSFET

500 V, 15 A, 480 mΩ

Features

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

Absolute Maximum Ratings

= 25°C unless otherwise noted.

TO-3PN

•

15 A, 500 V, R

DS(on)

= 480 mΩ (Max.) @ V

= 10 V,

= 7.5 A

•

Low Gate Charge (Typ. 43 nC)

•

Low C

rss

(Typ. 20 pF)

• 100% Avalanche Tested

•

Fast Recovery Body Diode (Typ. 100 ns)

Thermal Characteristics

Symbol Parameter FQA13N50CF

Unit

DSS

Drain-Source Voltage 500 V

Drain Current 15 A- Continuous (T

= 25°C)

- Continuous (T

= 100°C) 9.5 A

Drain Current - Pulsed

(Note 1)

60 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

860 mJ

Avalanche Current

(Note 1)

15 A

Repetitive Avalanche Energy

(Note 1)

21.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C) 218 W

- Derate above 25°C 1.56 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8''"from case for 5 seconds

300 °C

Symbol Parameter

FQA13N50CF

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.58

°C/W

θJS

Thermal Resistance, Case-to-Sink, Typ. 0.24

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

°C/W

Summary of content (8 pages)

PAGE 1
FQA13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number FQA13N50CF Top Mark FQA13N50CF Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 150°C -55°C 25°C 0 10 Notes : 1. 250us Pulse Test 2. TC = 25°C Notes : 1. VDS = 40V 10 -1 10 2. 250µs Pulse Test -1 -1 0 10 10 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250 µA 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 7.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9.
PAGE 5
FQA13N50CF — N-Channel QFET® FRFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13.
PAGE 6
FQA13N50CF — N-Channel QFET® FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FQA13N50CF — N-Channel QFET® FRFET® MOSFET Mechanical Dimensions Figure 16. TO3, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.