Datasheet

C2
FQA19N60
N-Channel QFET
®
MOSFET
600 V, 18.5 A, 380 mΩ
Description
FQA19N60 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev.
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
TO-3PN
G
D
S
G
S
D
18.5 A, 600 V, R
DS(on)
= 380 m
Ω
(Max.) @
V
GS
= 10 V,
I
D
= 9.3 A
Low Gate Charge (Typ. 70 nC)
Low Crss (Typ. 35 pF)
100% Avalanche Tested
•
•
•
•
Thermal Characteristics
Symbol Parameter FQA19N60
Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current 18.5 A
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
11.7 A
I
DM
Drain Current - Pulsed
(Note 1)
74 A
V
GSS
Gate-Source Voltage
±
30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1150 mJ
I
AR
Avalanche Current
(Note 1)
18.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
30 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5
V

ns
P
D
Power Dissipation (T
C
= 25°C)
300 W
- Derate above 25°C 2.38 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8

from Case for 5 Seconds
300 °C
Symbol Parameter
FQA19N60
Unit
R
θ
JC
Thermal Resistance, Junction-to-Case, Max.
0.42
°C

W
R
θ
CS
Thermal Resistance, Case-to-Sink, Typ.
0.24
°C

W
R
θ
JA
Thermal Resistance, Junction-to-Ambient, Max.
40
°C

W
April 2014