Datasheet
Package Marking and Ordering Information
Part Number Top Mark
Package Reel Size Tape Width Quantity
©2000 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2.
L = 6.2 mH, I
AS
= 18.5 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25
o
C.
3. I
SD
≤ 18.5 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25
o
C.
4.
Essentially independent of operating temperature.
Packing Method
FQA19N60 FQA19N60 TO-3PN N/A N/A
30 units
Tube
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
FQA19N60 — N-Channel QFET
®
MOSFET
(Note 4)
(Note 4)
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
µ
A
600 -- -- V
∆
BV
DSS
/
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25°C
-- 0.65 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
-- -- 10
µ
A
V
DS
= 480 V, T
C
= 125°C
-- -- 100
µ
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
3.0 -- 5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 9.3 A
-- 0.3 0.38
Ω
g
FS
Forward Transconductance
V
DS
= 50 V, I
D
= 9.3 A
-- 16 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 2800 3600 pF
C
oss
Output Capacitance -- 350 450 pF
C
rss
Reverse Transfer Capacitance -- 35 45 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 18.5 A,
R
G
= 25
Ω
-- 65 140 ns
t
r
Turn-On Rise Time -- 210 430 ns
t
d(off)
Turn-Off Delay Time -- 150 310 ns
t
f
Turn-Off Fall Time -- 135 280 ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 18.5 A,
V
GS
= 10 V
-- 70 90 nC
Q
gs
Gate-Source Charge -- 17 -- nC
Q
gd
Gate-Drain Charge -- 33 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 18.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 74 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 18.5 A
-- -- 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 18.5 A,
dI
F
/ dt = 100 A/
µ
s
-- 420 -- ns
Q
rr
Reverse Recovery Charge -- 4.7 --
µ
C
C2FQA19N60 Rev.