Datasheet

November 2013
Thermal Characteristics
FQA28N15
N-Channel QFET
®
MOSFET
150 V, 33 A, 90 mΩ
Description
©2000 Fairchild Semiconductor Corporation
FQA28N15 Rev. C1
www.fairchildsemi.com
1
FQA28N15 — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
Features
•
33 A, 150 V, R
DS(on)
= 90 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 16.5 A
•
Low Gate Charge (Typ. 0 nC)
•
Low Crss (Typ. 110 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
TO-3PN
G
D
S
G
S
D
 
FQA28N15

+
θ

Thermal Resistance, Junction-to-Case, Max.
0.66
6?
+
θ

Thermal Resistance, Junction-to-Ambient, Max.
40
6?
Symbol Parameter FQA28N15 Unit
V
DSS
Drain-Source Voltage 150 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
33 A
- Continuous (T
C
= 100°C)
23.3 A
I
DM
Drain Current - Pulsed
(Note 1)
132 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300 mJ
I
AR
Avalanche Current
(Note 1)
33 A
E
AR
Repetitive Avalanche Energy
(Note 1)
22.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
227 W
- Derate above 25°C 1.52 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
300 °C
•
175°C Maximum Junction Temperature Rating