Datasheet

October 2013
FQA30N40 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C1
www.fairchildsemi.com
1

N-Channel QFET
®
MOSFET
400 V, 30 A, 140 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.

• 30 A, 400 V, R
DS(on)
=
140 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 15 A
• Low Gate Charge (Typ. 90 nC)
• Low Crss ( Typ. 60 pF)
• 100% Avalanche Tested
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9
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
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%&& 8
 
FQA30N40

*
θ

Thermal Resistance, Junction-to-Case, Max.
& (%
8>
*
θ

Thermal Resistance, Junction-to-Ambient, Max.
(&
8>
TO-3PN
G
D
S
G
S
D