Datasheet

November 2013
FQA32N20C
N-Channel QFET
®
MOSFET
200 V, 32 A, 82 mΩ
Description
FQA32N20C — N-Channel QFET
®
MOSFET
©2004 Fairchild Semiconductor Corporation
FQA32N20C Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
TO-3PN
G
D
S
G
S
D
•
32 A, 200 V, R
DS(on)
= 82 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 16 A
•
Low Gate Charge (Typ. 82.5 nC)
•
Low Crss (Typ. 185 pF)
•
100% Avalanche Tested
Thermal Characteristics
Symbol Parameter FQA32N20C Unit
V
DSS
Drain-Source Voltage 200 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
32 A
- Continuous (T
C
= 100°C)
20.4 A
I
DM
Drain Current - Pulsed
(Note 1)
128 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
955 mJ
I
AR
Avalanche Current
(Note 1)
32 A
E
AR
Repetitive Avalanche Energy
(Note 1)
20.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
204 W
- Derate above 25°C 1.63 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300 °C
Symbol Parameter
FQA32N20C
Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max.
0.61
°C/W
R
θCS
Thermal Resistance, Case-to-Sink, Typ.
0.24
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
40
°C/W