Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQA36P15, MOSFET

December 2013

FQA36P15 — P-Channel QFET

MOSFET

FQA36P15 Rev C1

www.fairchildsemi.com

FQA36P15

P-Channel QFET

MOSFET

−

150 V, -36 A, 90 mΩ

Features

Description

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC motor

control, and variable switching power applications.

Absolute Maximum Ratings

= 25°C unless otherwise noted.

TO-3PN

•

-36 A, -150 V, R

DS(on)

= 90 mΩ (Max) @V

= -10 V, I

= -18 A

•

Low Gate Charge (Typ. 81 nC)

•

Low Crss (Typ. 110 pF)

• 100% Avalanche Tested

• 175°C Ma

ximum Junction Temperature Rating

Thermal Characteristics

Symbol Parameter FQA36P15

Unit

DSS

Drain-Source Voltage -150 V

Drain Current -36 A- Continuous (T

= 25°C)

- Continuous (T

= 100°C) -25.5 A

Drain Current - Pulsed

(Note 1)

-144 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

1400 mJ

Avalanche Current

(Note 1)

-36 A

Repetitive Avalanche Energy

(Note 1)

29.4 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-5.0 V/ns

Power Dissipation (T

= 25°C) 294 W

- Derate above 25°C 1.96 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.51 °C/W

θCS

Thermal Resistance, Case-to-Sink, Typ.

0.24 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

40 °C/W

FQA36P15

Summary of content (8 pages)

PAGE 1
FQA36P15 P-Channel QFET® MOSFET −150 V, -36 A, 90 mΩ Features Description • -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar • Low Gate Charge (Typ. 81 nC) stripe and DMOS technology. This advanced MOSFET • Low Crss (Typ.
PAGE 2
Part Number FQA36P15 Top Mark FQA36P15 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit -150 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.
PAGE 3
FQA36P15 — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V Top : 1 10 2 10 -ID, Drain Current [A] 2 10 -ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 175 C 1 10 o 25 C o -55 C 0 10 ※ Notes : 1. VDS = -40V 2. 250µ s Pulse Test ※ Notes : 1. 250µ s Pulse Test 2.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -18 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 150 200 TJ, Junction Temperature [ C] Figure 10.
PAGE 5
FQA36P15 — N-Channel QFET® MOSFET 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT 50KΩ 50K Ω Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13.
PAGE 6
FQA36P15 — N-Channel QFET® MOSFET + VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------te Pu Gate Ga Pullse Pe Perriod 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol o
PAGE 7
FQA36P15 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.