Datasheet

C2
FQA40N25
N-Channel QFET
®
MOSFET
250 V, 40 A, 70 mΩ
Description
FQA40N25 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev.
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche
energy
strength. These devices are suitable
for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
  
 
FQA40N25

,
θ

,=
0.45
6?
,
θ

,>
0.24
6?
,
θ

,=("
40
6?
, Max.
, Max.
, Typ.
• 40 A, 250 V, R
DS(on)
= 70 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 20 A
• Low Gate Charge ( Typ. 85nC)
• Low Crss ( Typ. 70pF)
• 100% Avalanche Tested
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
+
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6
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
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6
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8
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;'' 7
TO-3PN
G
D
S
G
S
D
April 2014