Datasheet

October 2013
FQA44N30
N-Channel QFET
®
MOSFET
300 V, 43.5 A, 69 mΩ
Description
FQA44N30 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQA44N30 Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
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 
FQA44N30

,
θ

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0.4
6?
,
θ

,>
0.24
6?
,
θ

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40
6?
, Max.
, Max.
, Typ.
TO-3PN
G
D
S
G
S
D
• 43.5 A, 300 V, R
DS(on)
= 69 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 21.75 A
• Low Gate Charge (Typ. 120 nC)
• Low Crss (Typ. 75 pF)
• 100% Avalanche Tested
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