Datasheet

Rev. C2
FQA62N25C
N-Channel QFET
®
MOSFET
250 V, 62 A, 35 mΩ
Description
FQA62N25C — N-Channel QFET
®
MOSFET
©2004 Fairchild Semiconductor Corporation
FQA62N25C
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS tec
hnology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
s
trength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
TO-3PN
G
D
S
G
S
D
•
62 A, 250 V, R
DS(on)
= 35 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 31 A
•
Low Gate Charge (Typ. 100 nC)
•
Low Crss (Typ. 63.5 pF)
•
100% Avalanche Tested
Thermal Characteristics
Symbol Parameter FQA62N25C
Unit
V
DSS
Drain-Source Voltage 250 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
62 A
- Continuous (T
C
= 100°C)
39 A
I
DM
Drain Current - Pulsed
(Note 1)
248 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
2300 mJ
I
AR
Avalanche Current
(Note 1)
62 A
E
AR
Repetitive Avalanche Energy
(Note 1)
29.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
298 W
- Derate above 25°C 2.38 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter
FQA62N25C
Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max.
0.42
°C/W
R
θCS
Thermal Resistance, Case-to-Sink, Typ.
0.24
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
40
°C/W
April 2014