Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQA6N90C_F109, MOSFET

December 2013

FQA6N90C_F109 — N-Channel QFET

MOSFET

FQA6N90C_F109 Rev C1

www.fairchildsemi.com

FQA6N90C_F109

N-Channel QFET

MOSFET

900 V, 6 A, 2.3 Ω

Features

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

Absolute Maximum Ratings

= 25°C unless otherwise noted.

TO-3PN

•

6 A, 900 V, R

DS(on)

= 2.3 Ω (Max.) @ V

= 10 V, I

= 3 A

•

Low Gate Charge (Typ. 30 nC)

•

Low Crss (Typ. 11 pF)

•

100% Avalanche Tested

• RoHS Compliant

Thermal Characteristics

Symbol Parameter FQA6N90C_F109

Unit

DSS

Drain-Source Voltage 900 V

Drain Current 6.0 A- Continuous (T

= 25°C)

- Continuous (T

= 100°C) 3.87 A

Drain Current - Pulsed

(Note 1)

24.0 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

650 mJ

Avalanche Current

(Note 1)

6.0 A

Repetitive Avalanche Energy

(Note 1)

19.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.0 V/ns

Power Dissipation (T

= 25°C) 198 W

- Derate above 25°C 1.59 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter

FQA6N90C_F109

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.63

°C/W

θCS

Thermal Resistance, Case-to-Sink, Typ. 0.24

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max

°C/W

Summary of content (8 pages)

PAGE 1
FQA6N90C_F109 N-Channel QFET® MOSFET 900 V, 6 A, 2.3 Ω Features Description • 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number FQA6N90C_F109 Top Mark FQA6N90C Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 900 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 -1 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -2 10 -1 0 10 10 1 10 2 10 6 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.0 A 0.5 0.0 -100 200 -50 0 Figure 9. Maximum Safe Operating Area 150 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FQA6N90C_F109 — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13.
PAGE 6
FQA6N90C_F109 — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FQA6N90C_F109 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.