Datasheet

October 2013
FQA70N10 N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQA70N10 Rev. C1
www.fairchildsemi.com
1
FQA70N10
N-Channel QFET
®
MOSFET
100 V, 70 A, 23 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
’s proprietary
planar
stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
70 A, 100 V, R
DS(on)
= 23 mΩ (Max) @V
GS
= 10 V,
I
D
= 35 A
Low Gate Charge (Typ. 85 nC)
Low Crss (Typ. 150 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
Absolute Maximum Ratings T
C
= 25°C unless otherwise no
ted
Thermal Characteristics
Symbol Parameter FQA70N10 Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
70 A
- Continuous (T
C
= 100°C)
49.5 A
I
DM
Drain Current - Pulsed
(Note 1)
280 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1300 mJ
I
AR
Avalanche Current
(Note 1)
70 A
E
AR
Repetitive Avalanche Energy
(Note 1)
21.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
214 W
- Derate above 25°C 1.43 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter
FQA70N10
Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max.
0.7 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
40 °C/W
TO-3PN
G
D
S
G
S
D

Summary of content (8 pages)