Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQA8N100C, MOSFET

March 2014

FQA8N100C — N-Channel QFET

MOSFET

FQA8N100C Rev C1

www.fairchildsemi.com

FQA8N100C

N-Channel QFET

MOSFET

1000 V, 8 A, 1.45 Ω

Features

•

DS(on)

= 1.45 Ω (Max.) @ V

= 10 V, I

= 4 A

•

Low Gate Charge (Typ. 53 nC)

•Low Crss (Typ. 16 pF)

•

100% Avalanche Tested

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies.

Absolute Maximum Ratings

= 25°C unless otherwise noted.

TO-3PN

Thermal Characteristics

Symbol Parameter FQA8N100C Unit

DSS

Drain-Source Voltage 1000 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

Drain Current - Pulsed

(Note 1)

32 A

GSS

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

(Note 2)

850 mJ

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

22.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.0 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

225

1.79

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.56 °C/W

θCS

Thermal Resistance, Case-to-Sink, Typ.

0.24 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

40 °C/W

FQA8N100C

Summary of content (8 pages)

PAGE 1
FQA8N100C N-Channel QFET® MOSFET 1000 V, 8 A, 1.45 Ω Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies. • RDS(on) = 1.
PAGE 2
Part Number FQA8N100C Top Mark FQA8N100C Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. 1000 -- -- V Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 1.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test -1 -1 0 10 10 1 10 10 2 8 6 4 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 o ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2.
PAGE 5
FQA8N100C — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13.
PAGE 6
FQA8N100C — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FQA8N100C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.