Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQA90N08, MOSFET

October 2013

FQA90N08 — N-Channel QFET

MOSFET

FQA90N08 Rev. C1

www.fairchildsemi.com

FQA90N08

N-Channel QFET

MOSFET

80 V, 90 A, 16 mΩ

Description

This N-Channel enhancement mode power MOSFET

is produced

using Fairchild Semiconductor’s

proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially tailored

to reduce on-state resistance, and to provide superior

switching performance and high avalanche energy strength.

These devices are suitable for switched mode power

supplies, audio amplifier, DC motor control, and variable

switching power applications.

Features

• 90 A, 80 V, R

DS(on)

= 16 mΩ (Max) @V

= 10 V,

= 45 A

• Low Gate Charge (Typ. 84 nC)

• Low Crss (Typ. 200 pF)

• 100% Avalanche Tested

• 175°C Maximum Junction Temperature Rating

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQA90N08 Unit

DSS

Drain-Source Voltage 80 V

Drain Current

- Continuous (T

= 25°C)

90 A

- Continuous (T

= 100°C)

63.5 A

Drain Current - Pulsed

(Note 1)

360 A

GSS

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

(Note 2)

1360 mJ

Avalanche Current

(Note 1)

90 A

Repetitive Avalanche Energy

(Note 1)

21.4 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

6.5 V/ns

Power Dissipation (T

= 25°C)

214 W

- Derate above 25°C 1.43 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter

FQA90N08

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.7 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

40 °C/W

TO-3PN

Summary of content (8 pages)

PAGE 1
FQA90N08 N-Channel QFET® MOSFET 80 V, 90 A, 16 mΩ Description Features This N-Channel enhancement mode power MOSFET using Fairchild Semiconductor’s is produced proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking Device FQA90N08 FQA90N08 Electrical Characteristics Symbol Package TO-3PN Reel Size - Tape Width Quantity - 30 TC = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 80 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 1 175℃ 10 25℃ 0 10 -55℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test -1 10 -1 10 0 10 1 10 10 2 4 6 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
(Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 45 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs.
PAGE 5
FQA90N08 — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 6
FQA90N08 — N-Channel QFET® MOSFET Figure 15.
PAGE 7
FQA90N08 — N-Channel QFET® MOSFET Mechanical Dimensions TO-3PN 3L Figure 16. 3LD, T03, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.