Datasheet

November 2013
FQAF16N50
N-Channel QFET
®
MOSFET
500 V, 11.3 A, 320 mΩ
Description
FQAF16N50 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQAF16N50 Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
TO-3PF
G
D
S
G
S
D
•
11.3 A, 500 V, R
DS(on)
= 320 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 5.65 A
•
Low Gate Charge (Typ. 60 nC)
•
Low Crss (Typ. 35 pF)
•
100% Avalanche Tested
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