Datasheet

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008
FQB12P20 / FQI12P20
FQB12P20 / FQI12P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -11.5A, -200V, R
DS(on)
= 0.47Ω @V
GS
= -10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQB12P20 / FQI12P20 Units
V
DSS
Drain-Source Voltage -200 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-11.5 A
- Continuous (T
C
= 100°C)
-7.27 A
I
DM
Drain Current - Pulsed
(Note 1)
-46 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
810 mJ
I
AR
Avalanche Current
(Note 1)
-11.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-5.5 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
3.13 W
Power Dissipation (T
C
= 25°C)
120 W
- Derate above 25°C 0.96 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 1.04 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
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October 2008
QFET
®
•
RoHS Compliant