Datasheet

November 2013
Thermal Characteristics
Symbol Parameter
FQB19N20CTM
Unit
R
JC
Thermal Resistance, Junction to Case, Max. 0.9
o
C/W
R
JA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5
FQB19N20C
N-Channel QFET
®
MOSFET
200 V, 19 A, 170
Description
FQB19N20C — N-Channel QFET
®
MOSFET
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
1
100% Avalanche Tested
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
19.0 A, 200 V, R
DS(on)
= 170 (Max.) @ V
GS
= 10 V,
I
D
= 9.5 A
Low Gate Charge (Typ. 40.5 nC)
Low C
rss
(Typ. 85 pF)
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Unit
V
DSS
Drain-Source Voltage V
I
D
Drain Current - Continuous (T
C
= 25°C)
A
- Continuous (T
C
= 100°C)
A
I
DM
Drain Current - Pulsed
(Note 1)
A
V
GSS
Gate-Source voltage V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
mJ
I
AR
Avalanche Current
(Note 1)
A
E
AR
Repetitive Avalanche Energy
(Note 1)
mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
V/ns
P
D
Power Dissipation (T
C
= 25°C)
W
- Derate above 25°C
W
T
J,
T
STG
Operating and Storage Temperature Range °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
FQB19N20CTM
200
19.0
12.1
76.0
± 30
433
19.0
13.9
5.5
3.13
139
-55 to +150
300
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max.
1.11
W/°C
Power Dissipation
(T
A
= 25°C)*
40
G
S
D
D
2
-PAK
G
S
D
RoHS Compliant

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