Datasheet

November 2013
Thermal Characteristics
FQB19N20L
N-Channel QFET
®
MOSFET
200 V, 21 A, 140 mΩ
Description
©2008 Fairchild Semiconductor Corporation
FQB19N20L Rev. C1
www.fairchildsemi.com
1
FQB19N20L — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•
21̀ A, 200 V, R
DS(on)
= 140 mΩ (Max.) @ V
GS
= 10 V,.
I
D
= 9.7 A
•
Low Gate Charge (Typ. 31 nC)
•
Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Symbol Parameter
FQB19N20LTM
Unit
R
JC
Thermal Resistance, Junction to Case, Max.
0.89
o
C/W
R
JA
Thermal Resistance, J
unction to Ambi
ent (
M
inimum
P
ad
of 2
-
oz Copper), Max.
62.5
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max.
40
G
S
D
D
2
-PAK
G
S
D
•
RoHS Compliant
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FQB19N20LTM
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5
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
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3 '3 @
90

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'-) @
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



+ 77A'7) 8


Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
3)) 8
Unit