Datasheet

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2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQB1P50
FQB1P50TM
D2-PAK 330mm 24mm 800
©2000 Fairchild Semiconductor Corporation
FQB1P50 Rev. C1
(Note 4)
(Note 4)
Elerical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 88mH, I
AS
= -1.5A, V
DD
= -50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
-1.5A, di/dt 200A/µs, V
DD
BV
DSS,
Starting T
J
= 25°C
4.
Essentially independent of operating temperature
Symbol Parameter Test Conditions
Min Typ Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 µA
-500 -- -- V
BV
DSS
/ T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250 µA, Referenced to 25°C
-- - -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -500 V, V
GS
= 0 V
-- -- -1 µA
V
DS
= -400 V, T
C
= 125°C
-- -- -10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
-3.0 -- -5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -0.75 A
-- 8.0 10.5
g
FS
Forward Transconductance
V
DS
= -50 V, I
D
= -0.75 A
-- 1.26 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 270 350 pF
C
oss
Output Capacitance -- 40 50 pF
C
rss
Reverse Transfer Capacitance -- 6.0 8.0 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -250 V, I
D
= -1.5 A,
R
G
= 25
-- 9.0 30 ns
t
r
Turn-On Rise Time -- 25 60 ns
t
d(off)
Turn-Off Delay Time -- 27 65 ns
t
f
Turn-Off Fall Time -- 30 70 ns
Q
g
Total Gate Charge
V
DS
= -400 V, I
D
= -1.5 A,
V
GS
= -10 V
-- 11 14 nC
Q
gs
Gate-Source Charge -- 2.0 -- nC
Q
gd
Gate-Drain Charge -- 5.6 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -1.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -6.0 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.5 A
-- -- -5.0 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -1.5 A,
dI
F
/ dt = 100 A/µs
-- 200 -- ns
Q
rr
Reverse Recovery Charge -- 0.7 -- µC
FQB1P50 P-Channel QFET
®
MOSFET