Datasheet

October 2013
Thermal Characteristics
Symbol Parameter Unit
R
JC
Thermal Resistance, Junction to Case, Max 1.18
o
C/W
R
JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5
Thermal Resistance, Junction to Ambient (* 1
in
2
pad of 2 oz copper), Max.
40
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter
FQB33N10LTM
Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current 33 A
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
23 A
I
DM
Drain Current - Pulsed
(Note 1)
132 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
430 mJ
I
AR
Avalanche Current
(Note 1)
33 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
3.75 W
Power Dissipation (T
C
= 25°C)
127 W
- Derate above 25°C 0.85 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
FQB33N10L
N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced
using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
33 A, 100 V, R
DS(on)
= 52 m (Max) @V
GS
= 10 V,
I
D
= 16.5 A
Low Gate Charge (Typ. 30 nC)
Low Crss (Typ. 70 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
100 V, 33 A, 52 m
Description
FQB33N10LTM
G
S
D
D
2
-PAK
G
S
D
FQB33N10L — N-Channel QFET
®
MOSFET
www.fairchildsemi.com
1
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1

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