Datasheet

October 2013
Thermal Characteristics
Symbol Parameter Unit
R
JC
Thermal Resistance, Junction to Case, Max. 1.18
o
C/W
R
JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5
Thermal Resistance, Junction to Ambient (* 1 in
2
p
ad of 2 oz copper), Max.
40
Absolute Maximum Ratings


T
C
= 25°C unless otherwise noted
Symbol Parameter
FQB33N10TM
Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
33 A
- Continuous (T
C
= 100°C)
23 A
I
DM
Drain Current - Pulsed
(Note 1)
132 A
V
GSS
Gate-Source Voltage
±
25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
435 mJ
I
AR
Avalanche Current
(Note 1)
33 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
3.75 W
Power Dissipation (T
C
= 25°C)
127 W
- Derate above 25°C 0.85 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8

from case for 5 seconds
300 °C
FQB33N10
N-Channel QFET
®
MOSFET
100 V,
3
3 A, 52 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using
Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high
avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
•
33 A, 100 V, R
DS(on)
= 52 mΩ (Max) @V
GS
= 10 V,
I
D
= 16.5 A
•
Low Gate Charge (Typ. 38 nC)
•
Low Crss (Typ. 62 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
FQB33N10TM
G
S
D
D
2
-PAK
G
S
D
www.fairchildsemi.com
1
©2000 Fairchild Semiconductor Corporation
FQB33N10 Rev. C1
FQB33N10 — N-Channel QFET
®
MOSFET