Datasheet
October 2013
FQB4N80 / FQI4N80
N-Channel QFET
®
MOSFET
800 V, 3.9 A, 3.6 Ω
Description
FQB4N80 / FQI4N80 — N-Channel QFET
®
MOSFET
©2007 Fairchild Semiconductor Corporation
FQB4N80 / FQI4N80 Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FQB4N80TM
FQI4N80TU
Unit
R
JC
Thermal Resistance, Junction to Case, Max.
0.96
o
C/W
R
JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
62.5
Thermal Resistance, Junction to Ambient (*1 in
2
pad of 2 oz copper), Max.
40
G
D
S
I
2
-PAK
G
S
D
D
2
-PAK
G
S
D
•
3.9 A, 800 V, R
DS(on)
= 3.6 Ω (Max.) @V
GS
= 10 V,
I
D
= 1.95 A
•
Low Gate Charge (Typ. 19 nC)
•
Low Crss (Typ. 8.6 pF)
• 100% Avalanche Tested
Symbol Parameter FQB4N80TM / FQI4N80TU Unit
V
DSS
Drain-Source Voltage 800 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
3.9 A
- Continuous (T
C
= 100°C)
2.47 A
I
DM
Drain Current - Pulsed
(Note 1)
15.6 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
460 mJ
I
AR
Avalanche Current
(Note 1)
3.9 A
E
AR
Repetitive Avalanche Energy
(Note 1)
13 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
3.13 W
Power Dissipation (T
C
= 25°C)
130 W
- Derate above 25°C 1.04 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C