Datasheet

November 2013
Thermal Characteristics
FQB55N10
N-Channel QFET
®
MOSFET
100 V, 55 A, 26 mΩ
Description
©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C1
www.fairchildsemi.com
1
FQB55N10 — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•
55 A, 100 V, R
DS(on)
= 26 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 27.5 A
•
Low Gate Charge (Typ. 75 nC)
•
Low Crss (Typ. 130 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Symbol Parameter
FQB55N10TM
Unit
R
JC
Thermal Resistance, Junction to Case, Max.
0.97
o
C/W
R
JA
Thermal Resistance, J
unction to Ambi
ent (
M
inimum
P
ad
of 2
-
oz Copper), Max.
62.5
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max.
40
G
S
D
D
2
-PAK
G
S
D
•
175°C Maximum Junction Temperature Rating
Symbol Parameter
FQB55N10TM Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current 55 A
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
38.9 A
I
DM
Drain Current - Pulsed
(Note 1)
220 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1100 mJ
I
AR
Avalanche Current
(Note 1)
55 A
E
AR
Repetitive Avalanche Energy
(Note 1)
15.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
3.75 W
Power Dissipation (T
C
= 25°C)
155 W
- Derate above 25°C 1.03 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300 °C