Datasheet

November 2013
FQB5N50C — N-Channel QFET
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FQB5N50C Rev. C1
www.fairchildsemi.com
1
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQB5N50CTM Unit
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
5A
- Continuous (T
C
= 100°C)
2.9 A
I
DM
Drain Current - Pulsed
(Note 1)
20 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300 mJ
I
AR
Avalanche Current
(Note 1)
5A
E
AR
Repetitive Avalanche Energy
(Note 1)
7.3 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
73 W
- Derate above 25°C 0.58 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter FQB5N50CTM Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 1.71
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5
FQB5N50C
N-Channel QFET
®
MOSFET
500 V, 5 A, 1.4
Features
5 A, 500 V, R
DS(on)
= 1.4 Ω (Max.) @ V
GS
= 10 V, I
D
= 2.5 A
Low Gate Charge (Typ. 18 nC)
Low Crss (Typ. 15 pF)
100% Avalanche Tested
RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
G
S
D
D
2
-PAK
G
S
D

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