Datasheet

October 2013
FQD13N06L / FQU13N06L
N-Channel QFET
®
MOSFET
60 V, 11 A, 115 mΩ
Description
FQD13N06L / FQU13N06L — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
G
D
S
I-PAK
D-PAK
G
S
D
G
S
D
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU_WS
Unit
R
JC
Thermal Resistance, Junction to Case, Max.
4.5
o
C/W
R
JA
Thermal Resistance, J
unction to Ambi
ent (
Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max.
50
•
11 A, 60 V, R
DS(on)
= 115 mΩ (Max) @ V
GS
= 10 V,
I
D
= 5.5 A
•
Low Gate Charge (Typ. 4.8 nC)
•
Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
•
Low Level Gate Drive Requirements Allowing
Direct Operation form Logic Drivers
Symbol Parameter
FQD13N06LTM / FQU13N06LTU
FQU13N06LTU_WS
Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
11 A
- Continuous (T
C
= 100°C)
A7
I
DM
Drain Current - Pulsed
(Note 1)
44 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
90 mJ
I
AR
Avalanche Current
(Note 1)
11 A
E
AR
Repetitive Avalanche Energy
(Note 1)
2.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
2.5 W
Power Dissipation (T
C
= 25°C)
28 W
- Derate above 25°C 0.22 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300 °C