Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQD16N25CTM, MOSFET

November 2013

FQD16N25C — N-Channel QFET

MOSFET

FQD16N25C Rev. C1

www.fairchildsemi.com

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQD16N25CTM Unit

DSS

Drain-Source Voltage

250

Drain Current

- Continuous (T

= 25°C)

- Continuous (T

= 100°C)

10.1

Drain Current - Pulsed

(Note 1)

GSS

Gate-Source Voltage

± 30

Single Pulsed Avalanche Energy

(Note 2)

432

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

160

dv/dt Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

Power Dissipation (T

= 25°C)

160

- Derate above 25°C

1.28

W/°C

, T

STG

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol Parameter FQD16N25CTM Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.78

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. 110

FQD16N25C

N-Channel QFET

MOSFET

250 V, 16 A, 270 mΩ

Features

• 16 A, 250 V, R

DS(on)

= 270 mΩ (Max.) @ V

= 10 V,

= 8 A

• Low Gate Charge (Typ. 41 nC)

• Low Crss (Typ. 68 pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

D-PAK

Summary of content (8 pages)

PAGE 1
FQD16N25C N-Channel QFET® MOSFET 250 V, 16 A, 270 mΩ Features Description • 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 41 nC) • Low Crss (Typ. 68 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
PAGE 2
Device Marking FQD16N25C Device FQD16N25CTM Electrical Characteristics Symbol Package D-PAK Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 250 -- -- V -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 8.9 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9.
PAGE 5
FQD16N25C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 6
FQD16N25C — N-Channel QFET® MOSFET Figure 15.
PAGE 7
FQD16N25C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.