Datasheet

November 2013
Thermal Characteristics
FQD4N25
N-Channel QFET
®
MOSFET
250 V, 3 A, 1.75 Ω
Description
©2005 Fairchild Semiconductor Corporation
FQD4N25 Rev. C1
www.fairchildsemi.com
1
FQD4N25 — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•
3 A, 250 V, R
DS(on)
= 1.75 Ω (Max.) @ V
GS
= 10 V,
I
D
= 1.5 A
•
Low Gate Charge (Typ. 4.3 nC)
•
Low Crss (Typ. 4.8 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
D-PAK
G
S
D
G
S
D
Symbol Parameter
FQD4N25TM_WS
Unit
R
JC
Thermal Resistance, Junction to Case, Max.
3.4
o
C/W
R
JA
Thermal Resistance, J
unction to Ambi
ent (
M
inimum
P
ad
of 2
-
oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max.
50
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FQD4N25TM_WS
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+
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

Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
&'' 8