Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQH8N100C, MOSFET

December 2013

FQH8N100C Rev C0

www.fairchildsemi.com

FQH8N100C

N-Channel QFET

MOSFET

1000 V, 8.0 A, 1.45 Ω

Description Features

Absolute Maximum Ratings

= 25°C unless otherwise noted.

Thermal Characteristics

This N-Channel enhancement mode power MOSFET is produced

using Fairchild Semiconductor’s proprietary planar stripe and

DMOS technology. This advanced MOSFET technology has

been especially tailored to reduce on-state resistance, and to

provide superior switching performance and high avalanche

energy strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

•

8 A, 1000 V, R

DS(on)

= 1.45 Ω (Max.) @ V

= 10 V

•

Low Gate Charge (Typ. 53 nC)

•

Low Crss (Typ. 16 pF)

•

Fast Switching

FQH8N100C — N-Channel QFET

MOSFET

Symbol Parameter

FQH8N100C

Unit

θJC

Thermal Resistance, Junction to Case, Max.

0.56

C/W

θJA

Thermal Resistance, Junction to Ambient, Max.

Symbol Parameter FQH8N100C Unit

Drain-Source Voltage 1000 V

Drain Current 8.0 A- Continuous (T

= 25°C)

- Continuous (T

= 100°C) 5.0 A

Drain Current - Pulsed

(Note 1)

32 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

850 mJ

Avalanche Current

(Note 1)

8.0 A

Repetitive Avalanche Energy

(Note 1)

22 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.0 V/ns

Power Dissipation (T

= 25°C) 225 W

- Derate above 25°C 1.79 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds.

300 °C

• 100% Avalanche Tested

•

Improved dv/dt Capability

•

RoHS Compliant

TO-247

Summary of content (8 pages)

PAGE 1
FQH8N100C N-Channel QFET® MOSFET 1000 V, 8.0 A, 1.45 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number FQH8N100C Top Mark FQH8N100C Electrical Characteristics Symbol Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 1000 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.
PAGE 3
FQH8N100C — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 0 o ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 6 1 ms 10 ms DC 4 0 10 ※ Notes : o 1.
PAGE 5
FQH8N100C — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13.
PAGE 6
FQH8N100C — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FQH8N100C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.