Datasheet

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2
FQN1N50C — N-Channel QFET
®
MOSFET
©2001 Fairchild Semiconductor Corporation
FQN1N50C Rev C1
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
TO-92 AMMO N/A N/A 2000 units
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25°C unless otherwise noted.
FQN1N50CTA
1N50C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 500 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C -- 0.5 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 500 V, V
GS
= 0 V -- -- 50 µA
V
DS
= 400 V, T
C
= 125°C -- -- 250 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 0.19 A -- 4.6 6.0 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 0.19A -- 0.6 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 150 195 pF
C
oss
Output Capacitance -- 28 40 pF
C
rss
Reverse Transfer Capacitance -- 4.1 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 250 V, I
D
= 1.0 A,
R
G
= 25 Ω
(Note 4)
-- 10 30 ns
t
r
Turn-On Rise Time -- 10 30 ns
t
d(off)
Turn-Off Delay Time -- 20 50 ns
t
f
Turn-Off Fall Time -- 15 40 ns
Q
g
Total Gate Charge V
DS
= 400 V, I
D
= 1.0 A,
V
GS
= 10 V
(Note 4)
-- 4.9 6.4 nC
Q
gs
Gate-Source Charge -- 0.66 -- nC
Q
gd
Gate-Drain Charge -- 2.9 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 0.38 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.04 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 0.38 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 1.0 A,
dI
F
/ dt = 100 A/µs
-- 188 -- ns
Q
rr
Reverse Recovery Charge
-- 0.55 -- µC
Notes:
1.
Repetitive rating : pulse-width limited by maximum junction temperature.
2.
L = 80 mH, I
AS
= 1.0 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3.
I
SD
≤ 0.38 A, di/dt ≤ 200 A/µs, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
5. a) Reference point of the R
θ
JL
is the drain lead.
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
θ
CA
is determined by the user’s board design)