Datasheet

December 2013
©2005 Fairchild Semiconductor Corporation
FQN1N60C Rev C1
www.fairchildsemi.com
1
FQN1N60C
N-Channel QFET
®
MOSFET
600 V, 0.30 A, 11.5 Ω
Description Features
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted.
Thermal Characteristics
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
0.30 A, 600 V, R
DS(on)
= 11.5 Ω (Max.) @ V
GS
= 10 V, I
D
= 0.15 A
•
Low Gate Charge (Typ. 4.8 nC)
•
Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
FQN1N60C — N-Channel QFET
®
MOSFET
Symbol Parameter
FQN1N60CTA
Unit
R
θJL
Thermal Resistance, Junction-to-Lead, Max.
50
o
C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
140
(
Note 5b)
(Note 5a)
TO-92
G
D
S
G
S
D
Symbol Parameter
FQN1N60CTA
Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C) 0.3 A
- Continuous (T
C
= 100°C) 0.18 A
I
DM
Drain Current - Pulsed (Note 1) 1.2 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy (Note 2) 33 mJ
I
AR
Avalanche Current (Note 1) 0.3 A
E
AR
Repetitive Avalanche Energy (Note 1) 0.3 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation (T
A
= 25°C) 1 W
Power Dissipation (T
L
= 25°C) 3 W
- Derate above 25°C 0.02 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
300
°C