Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQNL2N50BTA, MOSFET

November 2013

Thermal Characteristics

FQNL2N50B

N-Channel QFET

MOSFET

500 V, 0.35 A, 5.3 Ω

Description

FQNL2N50B Rev. C1

www.fairchildsemi.com

FQNL2N50B — N-Channel QFET

MOSFET

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

•

0.35 A, 500 V, R

DS(on)

= 5.3 Ω (Max.) @ V

= 10 V,

= 0.175 A

•

Low Gate Charge (Typ. 6 nC)

•

Low Crss (Typ. 4 pF)

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

 

FQNL2N50BTA





Thermal Resistance, Junction-to-Ambient, Max.

6?

Symbol Parameter

FQNL2N50BTA Unit

DSS

Drain-Source Voltage 500 V

Drain Current

- Continuous (T

= 25°C)

0.35 A

- Continuous (T

= 100°C)

0.22 A

Drain Current - Pulsed

(Note 1)

1.4 A

GSS

Gate-Source Voltage ± 30 V

Avalanche Current

(Note 1)

0.35 A

Repetitive Avalanche Energy

(Note 1)

0.15 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 2)

4.5 V/ns

Power Dissipation (T

= 25°C)

1.5 W

- Derate above 25°C 0.012 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering,

1/8" from case for 5 sec

onds.

300 °C

G D S

TO-92L

Summary of content (8 pages)

PAGE 1
FQNL2N50B N-Channel QFET® MOSFET 500 V, 0.35 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number Electrical Characteristics Symbol Package TO-92L Top Mark FQNL2N50B FQNL2N50BTA Packing Method AMMO Reel Size Tape Width N/A N/A Quantity 2000 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 500 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.
PAGE 3
VGS 5V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 Top : 0 10 ID , Drain Current [A] ID , Drain Current [A] 10 -1 10 150℃ 25℃ -55℃ ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Note 1. VDS = 50V 2. 250μ s Pulse Test -1 10 -2 10 -1 0 10 1 10 10 2 4 6 10 8 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
(Continued) 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Note : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Note : 1. VGS = 10 V 2. ID = 1.05 A 0.5 0.0 -100 200 -50 o 50 100 150 200 o Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 0.40 1 10 Operation in This Area is Limited by R DS(on) 0.35 0 0.
PAGE 5
200nF 12V FQNL2N50B — N-Channel QFET® MOSFET VGS Same Type as DUT 50KΩ Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14.
PAGE 6
+ VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2001 Fairchild Semiconductor Corporation FQNL2N50B Rev. C1 6 www.
PAGE 7
FQNL2N50B — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO92L, 3-Lead, 8 mm Long Body Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm FQNL2N50B — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.