Datasheet

November 2013
FQP13N10 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQP13N10 Rev. C1
www.fairchildsemi.com
1
FQP13N10
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
Features
12.8 A, 100 V, R
DS(on)
= 180 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 6.4 A
Low Gate Charge (Typ. 12 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
•175°C Maximum Junction Temperature Rating
TO-220
G
D
S
G
S
D
N-Channel QFET
®
MOSFET
100 V, 12.8 A, 180 mΩ
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP13N10 Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
12.8 A
- Continuous (T
C
= 100°C)
9.05 A
I
DM
Drain Current - Pulsed
(Note 1)
51.2 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
95 mJ
I
AR
Avalanche Current
(Note 1)
12.8 A
E
AR
Repetitive Avalanche Energy
(Note 1)
6.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
65 W
- Derate above 25°C 0.43 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP13N10 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 2.31 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

Summary of content (8 pages)