Datasheet

December 2013
©2006 Fairchild Semiconductor Corporation
FQP3N60C Rev C1
www.fairchildsemi.com
1
FQP3N60C
N-Channel QFET
®
MOSFET
600 V, 3.0 A, 3.4 Ω
Description Features
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted.
Thermal Characteristics
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
3.0 A, 600 V, R
DS(on)
= 3.4 Ω (Max.) @ V
GS
= 10 V, I
D
= 1.5 A
•
Low Gate Charge (Typ. 10.5 nC)
•
Low Crss (Typ. 5.0 pF)
• 100% Avalanche Tested
FQP3N60C — N-Channel QFET
®
MOSFET
Symbol Parameter
FQP3N60C
Unit
R
θJC
Thermal Resistance, Junction to Case, Max.
1.67
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max.
62.5
TO-220
G
D
S
G
S
D
Symbol Parameter FQP3N60C Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
3
1.8
A
A
I
DM
Drain Current - Pulsed
(Note 1)
12 A
V
GSS
Gate-Source voltage ±30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
150 mJ
I
AR
Avalanche Current (Note 1) A3
E
AR
Repetitive Avalanche Energy (Note 1) 7.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
75
0.62
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300 °C