Datasheet

November 2013
FQP3N80C / FQPF3N80C — N-Channel QFET
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C1
www.fairchildsemi.com
1
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP3N80C FQPF3N80C Unit
V
DSS
Drain to Source Voltage 800 V
I
D
Drain Current
-Continuous (T
C
= 25
o
C) 3 3 * A
-Continuous (T
C
= 100
o
C) 1.9 1.9 * A
I
DM
Drain Current - Pulsed (Note 1) 12 12 * A
V
GSS
Gate to Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy (Note 2) 320 mJ
I
AR
Avalanche Current (Note 1) 3A
E
AR
Repetitive Avalanche Energy (Note 1) 10.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 107 39 W
- Derate above 25
o
C 0.85 0.31 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter
FQP3N80C FQPF3N80C
Unit
R
θJC
Thermal Resistance, Junction to Case, Max 1.17 3.2 °C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W
*Drain current limited by maximum junction temperature
FQP3N80C / FQPF3N80C
N-Channel QFET
®
MOSFET
800 V, 3.0 A, 4.8 mΩ
Features
• 3.0 A, 800 V, R
DS(on)
= 4.8  (Max.) @ V
GS
= 10 V,
I
D
= 1.5 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
TO-220
G
D
S
TO-220F
G
D
S
G
S
D