Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQP45N15V2, MOSFET

October 2013

FQP45N15V2 / FQPF45N15V2

N-Channel QFET

MOSFET

150 V, 45 A, 40 mΩ

Description

FQP45N15V2 / FQPF45N15V2 — N-Channel QFET

MOSFET

FQP45N15V2 / FQPF45N15V2 Rev. C1

www.fairchildsemi.com

Features

Absolute Maximum Ratings T

= 25

C unless otherwise noted.

TO-220

TO-220F

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

• 45 A, 150 V, R

DS(on)

= 40 mΩ (Max.) @ V

= 10 V,

= 22.5 A

• Low Gate Charge (Typ. 72 nC)

• Low Crss (Typ. 135 pF)

• 100% Avalanche Tested

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FQP45N15V2 FQPF45N15V2

Unit

DSS

Drain-Source Voltage 150 V

Drain Current

- Continuous (T

= 25°C)

45 45 * A

- Continuous (T

= 100°C)

31 31 * A

Drain Current - Pulsed

(Note 1)

180 180 * A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

1124 mJ

Avalanche Current

(Note 1)

45 A

Repetitive Avalanche Energy

(Note 1)

22 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

220 66 W

- Derate above 25°C 1.47 0.44 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter FQP45N15V2 FQPF45N15V2

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.68 2.25 °C/W

θCS

Thermal Resistance, Case-to-Sink, Typ.

0.5 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5 62.5 °C/W

Summary of content (10 pages)

PAGE 1
FQP45N15V2 / FQPF45N15V2 N-Channel QFET® MOSFET 150 V, 45 A, 40 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number FQP45N15V2 Top Mark PV245N15 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FQPF45N15V2 FQPF45N15V2 TO-220F Tube N/A N/A 50 units Electrical Characteristics T Symbol o C = 25 C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit 150 -- -- V -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 10 2 10 o 175 C ID, Drain Current [A] 2 1 10 o 25 C 1 10 o -55 C 0 10 ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 10 2 4 Figure 1. On-Region Characteristics IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2 10 0.12 VGS = 10V 0.10 0.08 0.06 VGS = 20V 0.
PAGE 4
3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 22.5 A 0.5 0.0 -100 200 o 50 100 150 200 Figure 8.
PAGE 5
ZJC(t), Thermal Response [oC/W] 10 FQP45N15V2 / FQPF45N15V2 — N-Channel QFET® MOSFET ! 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C( t) = 0 .6 8 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le e p -2 10 -5 10 -4 se 10 -3 10 -2 10 -1 10 t2 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] ZJC(t), Thermal Response [oC/W] Figure 11.
PAGE 6
FQP45N15V2 / FQPF45N15V2 — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14.
PAGE 7
+ VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2004 Fairchild Semiconductor Corporation FQP45N15V2 / FQPF45N15V2 Rev.
PAGE 8
FQP45N15V2 / FQPF45N15V2 — N-Channel QFET® MOSFET Mechanical Dimensions TO-220 3L Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FQP45N15V2 / FQPF45N15V2 — N-Channel QFET® MOSFET Mechanical Dimensions TO-220F 3L Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.