Datasheet

December 2013
Thermal Characteristics
FQP46N15
N-Channel QFET
®
MOSFET
150 V, 45.6 A, 42 mΩ
Description
©2000 Fairchild Semiconductor Corporation
FQP46N15 Rev. C1
www.fairchildsemi.com
1
FQP46N15 — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
•
45.6 A, 150 V, R
DS(on)
= 42 mΩ (Max.) @ V
GS
= 10
V, I
D
= 22.6 A
•
Low Gate Charge (Typ. 85 nC)
•
Low Crss (Typ. 100 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
TO-220
G
D
S
G
S
D
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FQP46N15
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+
θ

Thermal Resistance, Junction-to-Case, Max.
0.7
6?
+
θ

Thermal Resistance, Junction-to-Ambient, Max.
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Unit
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6
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/* ?
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/*+ A
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



- ''B*7' :


Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
;++ :
• 175°C Maximum Junction Temperature Rating