Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQP6N80C, MOSFET

December 2013

Thermal Characteristics

FQP6N80C / FQPF6N80C

N-Channel QFET

MOSFET

800 V, 5.5 A, 2.5 Ω

Description

FQP6N80C / FQPF6N80C Rev. C1

www.fairchildsemi.com

FQP6N80C / FQPF6N80C — N-Channel QFET

MOSFET

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

•

5.5 A, 800 V, R

DS(on)

= 2.5 Ω (Max.) @ V

= 10 V,

= 2.75 A

•

Low Gate Charge (Typ. 21 nC)

•

Low Crss (Typ. 8 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

Symbol Parameter FQP6N80C

FQPF6N80C /

FQPF6N80CT

Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.79 2.45

°C/W

θCS

Thermal Resistance, Case-to-Sink Typ, Max.

0.5 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5 62.5 °C/W

TO-220

TO-220F

* Drain current limited by maximum junction temperature.

Symbol Parameter FQP6N80C

FQPF6N80C /

FQPF6N80CT

Unit

DSS

Drain-Source Voltage 800 V

Drain Current

- Continuous (T

= 25°C)

5.5 5.5 * A

- Continuous (T

= 100°C)

3.2 3.2 * A

Drain Current - Pulsed

(Note 1)

22 22 * A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

680 mJ

Avalanche Current

(Note 1)

5.5 A

Repetitive Avalanche Energy

(Note 1)

15.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

158 51 W

- Derate above 25°C 1.27 0.41 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds.

300 °C

Summary of content (10 pages)

PAGE 1
FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description Features • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number FQP6N80C Top Mark FQP6N80C Package TO-220 FQPF6N80C FQPF6N80C TO-220F Tube N/A N/A 50 units FQPF6N80CT FQPF6N80CT TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 -1 10 o 150 C 0 10 o -55 C o 25 C ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -2 10 ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
(Continued) 1.2 3.0 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.0 -100 200 -50 0 100 150 200 o Figure 8. On-Resistance Variation vs Temperature Figure 7.
PAGE 5
ZJC(t), Thermal Response [oC/W] 10 FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET Typical Characteristics (Continued) 0 D = 0 .5 0 .2 10 -1 ※ N o te s : 1 . Z θ J C( t ) = 0 . 7 9 ℃ / W M a x . 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ZJC(t), Thermal Response [oC/W] Figure 11-1.
PAGE 6
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET 200nF 12V VGS Same Type as DUT 50KΩ Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14.
PAGE 7
+ VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev.
PAGE 8
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.