Datasheet

December 2013
Thermal Characteristics
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Channel QFET
®
MOSFET
800 V, 8.0 A, 1.55 Ω
Description
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
www.fairchildsemi.com
1
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•
8.0 A, 800 V, R
DS(on)
= 1.55 Ω (Max.) @ V
GS
= 10 V,
I
D
= 4.0 A
•
Low Gate Charge (Typ. 35 nC)
•
Low Crss (Typ. 13 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Symbol Parameter FQP8N80C FQPF8N80C Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 0.89 2.66
°C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ, Max.
0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5 62.5 °C/W
TO-220
G
D
S
TO-220F
G
D
S
G
S
D
* Drain current limited by maximum junction temperature.
Symbol Parameter FQP8N80C FQPF8N80C Unit
V
DSS
Drain-Source Voltage 800 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
88 *A
- Continuous (T
C
= 100°C)
5.1 5.1 * A
I
DM
Drain Current - Pulsed
(Note 1)
32 32 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
850 mJ
I
AR
Avalanche Current
(Note 1)
8A
E
AR
Repetitive Avalanche Energy
(Note 1)
17.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
178 59 W
- Derate above 25°C 1.43 0.48 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300 °C
G
S
D
TO-220F
Y-formed