Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQP8P10, MOSFET

FQP8P10

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQP8P10 Unit

DSS

Drain-Source Voltage -100 V

Drain Current

- Continuous (T

= 25°C)

-8.0 A

- Continuous (T

= 100°C)

-5.7 A

Drain Current - Pulsed

(Note 1)

-32 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

150 mJ

Avalanche Current

(Note 1)

-8.0 A

Repetitive Avalanche Energy

(Note 1)

6.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-6.0 V/ns

Power Dissipation (T

= 25°C)

65 W

- Derate above 25°C 0.43 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max

Unit

θJC

Thermal Resistance, Junction-to-Case -- 2.31 °C/W

θCS

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQP8P10 P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor

’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

•

-8 A, -100 V, R

DS(on)

=530 mΩ(Max.) @V

=-10 V, I

=-4 A

•

Low Gate Charge (Typ. 12 nC)

•

Low Crss (Typ. 30 pF)

•

100% Avalanche Tested

March 2013

P-Channel QFET

MOSFET

-100 V, -8 A, 530 mΩ

•

175°C Maximum Junction Temperature Rating

TO-220

FQP8P10 Rev. C0

www.fairc

hildsemi.com

Summary of content (8 pages)

PAGE 1
FQP8P10 P-Channel QFET® MOSFET -100 V, -8 A, 530 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.
PAGE 3
FQP8P10 P-Channel MOSFET Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top : -ID, Drain Current [A] 10 0 10 1 10 -I D , Drain Current [A] 1 -1 10 175℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -2 10 10 -1 0 10 2 1 10 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
FQP8P10 P-Channel MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.0 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8.
PAGE 5
FQP8P10 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev.
PAGE 6
FQP8P10 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2002 Fairchild Semiconductor Corporation FQP8P
PAGE 7
FQP8P10 P-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FQP8P10 Rev. C0 www.fairchildsemi.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.