Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQP9P25, MOSFET

October 2013

FQP9P25 — P-Channel QFET

MOSFET

www.fairchildsemi.com

FQP9P25

P-Channel QFET

MOSFET

-250 V, -9.4 A, 620 mΩ

Description

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce

on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable

switching power applications.

Features

•

-9.4 A, -250 V, R

DS(on)

= 0.62 Ω (Max.)@V

= -10 V,

= -4.7 A

• Low gate charge ( typ. 29 nC)

•

Low Crss ( typ. 27 pF)

•

100% avalanche tested

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQP9P25 Unit

DSS

Drain-Source Voltage -250 V

Drain Current -9.4 A

- Continuous (T

= 25°C)

- Continuous (T

= 100°C)

-5.9 A

Drain Current - Pulsed

(Note 1)

-37.6 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

650 mJ

Avalanche Current

(Note 1)

-9.4 A

Repetitive Avalanche Energy

(Note 1)

12 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-5.5 V/ns

Power Dissipation (T

= 25°C)

120 W

- Derate above 25°C 0.96 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300 °C

Symbol Parameter

FQP9P25

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

1.04

°C/W

θJA

Thermal Resis

tance, Junction-to-Ambient, Max.

62.5

°C/W

TO-220

FQP9P25 Rev. C0

Summary of content (8 pages)

PAGE 1
FQP9P25 P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking FQP9P25 Device FQP9P25 Electrical Characteristics Symbol Package TO220 Reel Size - Tape Width - Quantity 50 TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -250 -- -- V -- -0.
PAGE 3
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : -I D, Drain Current [A] 1 10 -I D , Drain Current [A] 1 10 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 150℃ 0 10 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -1 -1 10 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = - 10V 1.
PAGE 4
(Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs.
PAGE 5
FQP9P25 — P-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA IG = const. Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT VGS -10V VDS 90% Figure 14.
PAGE 6
FQP9P25 — P-Channel QFET® MOSFET Figure 15.
PAGE 7
FQP9P25 — P-Channel QFET® MOSFET Mechanical Dimensions TO-220 3L Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.