Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQPF10N20C, MOSFET

November 2013

FQP10N20C / FQPF10N20C — N-Channel QFET

MOSFET

FQP10N20C / FQPF10N20C Rev. C1

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQP10N20C FQPF10N20C Unit

DSS

Drain to Source Voltage 200 V

Drain Current

-Continuous (T

= 25

C) 9.5 9.5 * A

-Continuous (T

= 100

C) 6.0 6.0 * A

Drain Current - Pulsed (Note 1) 38 38 * A

GSS

Gate to Source Voltage ± 30 V

Single Pulsed Avalanche Energy (Note 2) 210 mJ

Avalanche Current (Note 1) 9.5 A

Repetitive Avalanche Energy (Note 1) 7.2 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 5.5 V/ns

Power Dissipation

= 25

C) 72 38 W

- Derate above 25

C 0.57 0.3 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter

FQP10N20C FQPF10N20C

Unit

θJC

Thermal Resistance, Junction to Case, Max 1.74 3.33 °C/W

θJA

Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W

*Drain current limited by maximum junction temperature

FQP10N20C / FQPF10N20C

N-Channel QFET

MOSFET

200 V, 9.5 A, 360 mΩ

Features

• 9.5 A, 200 V, R

DS(on)

= 360 m (Max.) @ V

= 10 V,

= 4.75 A

• Low Gate Charge (Typ. 20 nC)

• Low Crss (Typ. 40.5 pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

active power factor correction (PFC), and electronic lamp

ballasts.

TO-220

TO-220F

Summary of content (10 pages)

PAGE 1
FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ Features Description • 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 20 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 40.
PAGE 2
Device Marking FQP10N20C Device FQP10N20C Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units FQPF10N20C FQPF10N20C TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.
PAGE 4
(Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.75 A 0.5 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8.
PAGE 5
o ZθJC Zθ (t), (t),Thermal ThermalResponse Response [ C/W] JC 10 0 (Continued) D = 0 .5 ※ N o te s : 1 . Z θ J C( t ) = 1 . 7 4 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 10 FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Typical Characteristics 0 .0 5 -1 0 .0 2 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] D = 0 .5 10 0 0 .
PAGE 6
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 7
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Figure 15.
PAGE 8
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.